Dr. Koteeswara Reddy Nandanapalli
Angestellt, Senior Research Associate, Sungkyunkwan University, Suwon, South Korea
Seoul, Südkorea
Werdegang
Berufserfahrung von Koteeswara Reddy Nandanapalli
Bis heute 7 Jahre und 9 Monate, seit Okt. 2016
Senior Research Associate
Sungkyunkwan University, Suwon, South Korea
• Development of inorganic materials doped DNA films and studying their physical properties. • Synthesis of graphene monolayers and Germanium/metal oxide core/shell nanostructures. • Fabrication of graphene-based sensor devices, and Ge/ZnO or Ge/TiO2 photoelectrodes for PEC devices. • Supporting to MS and PhD students and helping in proposals and research articles writing.
9 Monate, Okt. 2015 - Juni 2016
Assistant Professor
BML Munjal University, Gurugram, India
• Course content design, course material preparation, and teaching. • Taught Physics, designed the lab courses, and trained the graduation students. • Participated in academic activities.
2 Jahre, Okt. 2013 - Sep. 2015
Marie Curie Senior Research Fellow
Humboldt University, Berlin, Germany
• Aligned metal-oxide nanostructures were developed on different planar and flexible substrates. • Nanostructures were functionalized with different pseudo-metals and explored their properties. • Surface functionalized nanostructures were tested as photoanodes and studied their sustainability and durability in different electrolyte solutions.
2 Jahre und 2 Monate, Aug. 2011 - Sep. 2013
CSIR Senior Research Associate
Indian Institute of Science, Bangalore, India
• High-quality SnS thin films were developed and explored the process conditions. • Solar cell using ZnO/SnS hetero-structures were fabricated and their PV device properties explored. • Sustainability of nanostructured materials under dynamic shock waves was investigated.
1 Jahr, Apr. 2010 - März 2011
Senior Postdoctoral Fellow
GIST, Gwangju, South Korea
• Flexible devices using ZnO and PEDOT: PSS were developed, and their diode performances were studied. • Adaptability of ITO as TCO for prototype solar cell devices was investigated. • Investigated the impact of Ni layer growth on the physical and chemical properties of ZnO nanowires.
1 Jahr und 9 Monate, Juni 2008 - Feb. 2010
Postdoctoral Fellow
Tel Aviv University, Tel Aviv, Israel
• Metal (Ag, Ni, Au) and semiconductor (Si, Ge, ZnO, CdSe) based nanostructures were developed using multidisciplinary techniques. • Ordered arrays of vertically aligned Si/ZnO hierarchical hetero nanostructures have been developed.
1 Jahr und 6 Monate, Sep. 2006 - Feb. 2008
Postdoctoral Fellow
Chonbuk National University, Jeonju, South Korea
• Nanomaterials were synthesized using low-cost and straightforward techniques. • Metallization (single and bi-layer contacts) schemes for thin films and nanostructured materials were investigated. • Si/ZnO and GaN/ZnO heterojunction devices were fabricated and explored their devices characteristics.
2 Jahre, Okt. 2004 - Sep. 2006
Research Associate
Indian Institute of Science, Bangalore, India
• Nonoxide chalcogenide glassy materials (bulk and thin films) were developed by melt quenching and melt spinning methods in view of their switching, conductivity conversion, and energy harvesting device applications. • Impact of processes parameters on the quality of thermally evaporated SnS thin films was investigated.
Ausbildung von Koteeswara Reddy Nandanapalli
9 Jahre und 6 Monate, Jan. 1996 - Juni 2005
Materials Science
Sri Venkateswara University, Tirupati, India
Studies in Thin Films - Tin Sulfide Films for Photovoltaic Applications
1 Jahr und 8 Monate, Sep. 1992 - Apr. 1994
Physics
Sri Venkateswara University, Tirupati, India
Chemical physics & Electronics
2 Jahre und 9 Monate, Aug. 1989 - Apr. 1992
Chemistry, Mathematics and Physics
Sri Venkateswara University, Tirupati, India
Mathematics, Physics, and Chemistry
Sprachen
Englisch
Fließend
Telugu
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Tamil
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Kannada
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